APTC90AM602G APTC90AM602G C rev 1 october, 2012 www.microsemi.com 1 C 5 12 3 4 18 10 9 68 7 13 1614 1512 17 11 5 pins 1/2/3/4 ; 5/6/7/8 ; 11/12/13/14/15/16 must be shorted together all ratings @ t j = 25c unless otherwise specified absolute maximum ratings these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 900 v t c = 25c 59 i d continuous drain current t c = 80c 44 i dm pulsed drain current 150 a v gs gate - source voltage 20 v r dson drain - source on resistance 60 m ? p d maximum power dissipation t c = 25c 462 w i ar avalanche current (repetitive and non repetitive) 8.8 a e ar repetitive avalanche energy 2.9 e as single pulse avalanche energy 1940 mj v dss = 900v r dson = 60m ? max @ tj = 25c i d = 59a @ tc = 25c application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? coolmos? - ultra low r dson - low miller capacitance - ultra low gate charge - avalanche energy rated - very rugged ? very low stray inductance ? kelvin source for easy drive ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? low profile ? rohs compliant phase leg super junction mosfet power module downloaded from: http:///
APTC90AM602G APTC90AM602G C rev 1 october, 2012 www.microsemi.com 2 C 5 electrical characteristics symbol characteristic test conditions min typ max unit i dss zero gate voltage drain current v gs = 0v,v ds = 900v 200 a r ds(on) drain C source on resistance v gs = 10v, i d = 52a 50 60 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 6ma 2.5 3 3.5 v i gss gate C source leakage current v gs = 20 v, v ds = 0v 200 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 13.6 c oss output capacitance v gs = 0v ; v ds = 100v f = 1mhz 0.66 nf q g total gate charge 540 q gs gate C source charge 64 q gd gate C drain charge v gs = 10v v bus = 400v i d = 52a 230 nc t d(on) turn-on delay time 70 t r rise time 20 t d(off) turn-off delay time 400 t f fall time inductive switching (125c) v gs = 10v v bus = 600v i d = 52a r g = 3.8 ? 25 ns t j = 25c 1.5 e off turn-off switching energy inductive switching v gs =10v ; i d =52a v bus =600v ; r g =3.8 ? t j = 125c 1.7 mj r thjc junction to case thermal resistance 0.27 c/w source - drain diode ratings and characteristics symbol characteristic test conditions min typ max unit tc = 25c 59 i s continuous source current (body diode) tc = 80c 44 a v sd diode forward voltage v gs = 0v, i s = - 52a 0.8 1.2 v t rr reverse recovery time t j = 25c 920 ns q rr reverse recovery charge i s = - 52a v r = 400v di s /dt = 200a/s t j = 25c 60 c thermal and package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2 3 n.m wt package weight 75 g downloaded from: http:///
APTC90AM602G APTC90AM602G C rev 1 october, 2012 www.microsemi.com 3 C 5 sp2 package outline (dimensions in mm) typical coolmos performance curve zvs 0 100 200 300 400 500 20 25 30 35 40 45 50 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =600v d=50% r g =3.8 ? t j =125c t c =75c switching energy vs current 0.0 0.5 1.0 1.5 2.0 2.5 3.0 10 20 30 40 50 60 70 80 i d , drain current (a) eoff (mj) v ds =600v r g =3.8 ? t j =125c l=100h on resistance vs temperature 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 t j , junction temperature (c) r ds(on) , drain to source on resistance (normalized) switching energy vs gate resistance eoff 1 2 3 4 5 6 3691 21 5 gate resistance (ohms) switching energy (mj) v ds =600v i d =52a t j =125c l=100h downloaded from: http:///
APTC90AM602G APTC90AM602G C rev 1 october, 2012 www.microsemi.com 4 C 5 d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 5v 6v 0 40 80 120 160 200 240 0 5 10 15 20 v ds , drain to source voltage (v) i d , drain current (a) low voltage output characteristics v gs =20, 8v 0 10 20 30 40 50 60 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature 900 925 950 975 1000 25 50 75 100 125 t j , junction temperature (c) breakdown voltage vs temperature bv dss , drain to source breakdown voltage ciss crss coss 1 10 100 1000 10000 100000 0 25 50 75 100 125 150 175 200 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage 0 2 4 6 8 10 0 100 200 300 400 500 600 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage v ds =400v i d =52a t j =25c coolmos? comprise a new family of transi stors developed by infineon technologies ag. coolmos is a trademark of infineon technologies ag. downloaded from: http:///
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